By S. Chiang, R. J. Wilson (auth.), Ralph Feder, J. Wm. McGowan, Douglas M. Shinozaki (eds.)

ISBN-10: 1461292972

ISBN-13: 9781461292975

ISBN-10: 146132209X

ISBN-13: 9781461322092

An Institute like ours can't support yet lend credence to the idea of the past due Derek J. de Solla cost of Yale collage that "the medical revolution used to be principally the development, invention and use of a sequence of tools . . . . that multiplied the succeed in of technological know-how in innumerable directions". so much of technological know-how this day and in years passed by will depend on the experimental commentary of struc­ ture at the small scale with microscopes, and at the huge scale with telescopes. the 1st tools to extend the observational variety of the human eye have been easy optical platforms, designed when it comes to microscopes and telescopes to exaggerate the picture. the massive step forward within the seventeenth century used to be now not while Galileo first grew to become his telescope to the heavens, but if advancements in lens-grinding ideas allowed eyeglass makers to make the 1st telescope. Early microscopy printed new and formerly unsuspected microstruc­ tures in organic and non-biological fabrics and hence helped to magnify at the realizing of the connection among constitution and houses. The typical inclination of all microscopists, the need to monitor ever smaller constructions, used to be chuffed by means of the development of upper caliber optical platforms which diminished the aberrations restricting the usable magnification. The modem optical microscope is the results of this evolution in layout and building, and it may be operated simply to accomplish on the subject of the theoretical resolution.

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D. Brown Faculty of Engineering Science and The Centre for Interdisciplinary Studies in Chemical Physics The University of Western Ontario London, Canada N6A 5B9 ABSTRACT Secondary ion mass spectrometry is one of the most sensitive techniques for determining dopant profiles in semiconductors. Depth resolutions of less than 10 nm can be achieved with sensitivities down to 1 x 10 16 atoms/cm 3 for the important dopant elements. 5 ~m. Practical and theoretical limitations in three-dimensional depth profiling are discussed.

The spatial relationship of the secondary ions leaving the surface of the specimen is maintained in passing through the instrument so that when the secondary ion beam is magnified and spread out to strike the channel plate, a magnified image of the specimen in terms of ion intensity is seen on the fluorescent screen. Figure 7 shows such an image from an integrated circuit chip for both 27Al+ and 28Si+ ions. An important fact to realize about images formed in this manner is that the resolution in the image is a function of the secondary ion optics only, and the primary ion beam diameter is unimportant in the definition of such an image.

E. Stoll, "Scanning Tunneling Microscopy," Proceedings AVCP Meeting, March 11-17, 1984, Saas Fee Switzerland. Note: These are very comprehensive lecture notes summarizing both the experimental and theoretical aspects of scanning tunneling microscopy. 11. A. Baratoff, Europhysics Conference Abstracts, 7b, 364 (1983). 12. J. Tersoff and D. R. Hamann, Phys. Rev. , 50, 1998 (1983). 13. N. Garcia, C. Ocal, F. Flores, Phys. Rev. , 50,2002 (1983). 14. E. Stoll, A. Baratoff, A. Selloni, and P. Carnevali, J.

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Examining the Submicron World by S. Chiang, R. J. Wilson (auth.), Ralph Feder, J. Wm. McGowan, Douglas M. Shinozaki (eds.)


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